Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:31:37.093Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP

Published online by Cambridge University Press:  25 February 2011

J. Lopata ,
W. C. Dautremont-Smith ,
S. J. Pearton ,
J. W. Lee ,
N. T. Ha  and
H. S. Luftman
J. Lopata
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. C. Dautremont-Smith
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. W. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
N. T. Ha
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. S. Luftman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H2 or D2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiNx, SiO2, and a-Si(H) films ranging in thickness from 85 to 225 Å were used to protect p-InP during D2 plasma exposure at 250°C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ~100 Å thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Å Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 501
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pearton, S. J., Corbett, J. W., and Shi, T. S., Appl. Phys. A43, 153 (1987).Google Scholar
2 Dautremont-Smith, W. C., Mater. Res. Soc. Symp. Proc. 104, 313 (1988).Google Scholar
3 Chang, R. P. H., Chang, C. C., and Darack, S., J. Vac. Sci. Technol., 20, 45 (1982).Google Scholar
4 Clark, D. T. and Fok, T., Thin Solid Films 78, 271 (1981).Google Scholar
5 Chevallier, J., Jalil, A., Theys, B., Pesant, J. C., Aucouturier, M., Rose, B., and Mircea, A., Semicond. Sci. Technol. 4, 87 (1989).Google Scholar
6 Omeljanovsky, E. M., Pakhomov, A. V., and Polyakov, A. Y., Materials Science Forum Vols. 38–41, 1063 (1989).Google Scholar
7 Dautremont-Smith, W. C., Lopata, J., Pearton, S. J., Koszi, L. A., Stavola, M., and Swaminathan, V., J. Appl. Phys. 66, 1993 (1989).Google Scholar
8 Chevallier, J., Dautremont-Smith, W. C., Tu, C. W., and Pearton, S. J., Appl. Phys. Lett. 47 (2), 108 (1985).Google Scholar
9 Johnson, N. M., Burnham, R. D., Street, R. A., and Thornton, R. L., Phys. Rev. B, 33 (2), 1102(1986).Google Scholar