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Surface Processes Limiting the High Rate Deposition of High Electronic Quality a-Si

Published online by Cambridge University Press:  21 February 2011

S. Veprek ,
O. Anibacher  and
M. Riickschloβ
S. Veprek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/München, FRG
O. Anibacher
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/München, FRG
M. Riickschloβ
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/München, FRG
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Abstract

Amorphous silicon of a high electronic quality with Odatk 10-10, σPh ≈ 1·10-4 (Ωcm)-3 and density of gap states of about 0.3 to 2.1016 eV-1cm-3 is deposited at rates up to 17 Å/sec. The rate limiting steps are identified and their control via the plasma parameters is explained. This allows one to establish the fundamental scaling parameters for large-area high-rate deposition of a-Si. Long term stability of the films in terms of postoxidation and photode-gradation is briefly addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 667
Copyright
Copyright © Materials Research Society 1991

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References

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