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Surface Passivation of Single Crystalline Silicon by Thin Amorphous Silicon Layers

Published online by Cambridge University Press:  21 February 2011

C. Swiatkowski ,
A. Sanders ,
H.-C. Neitzert  and
M. Kuns
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, SI: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
A. Sanders
Affiliation:
Hahn-Meitner-Institut, SI: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
H.-C. Neitzert
Affiliation:
Hahn-Meitner-Institut, SI: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
M. Kuns
Affiliation:
Hahn-Meitner-Institut, SI: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

It is shown that the deposition of a-Si:H films on c-Si wafers yields a reasonably passivated surface of the wafer. The passivation of the c-Si surface is better, if the a-Si:H film has better optoelectronic properties. Cleaning of the wafer surface deposition is required as it is shown for HF cleaning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 429
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Madan, A. Shaw, M.P., The Physics and Applications of amorphous Semiconductors, Academic, New York 1988 Google Scholar
[2] Neitzert, H.-C. and Kunst, M., Appl.Phys. A55,378 (1992)Google Scholar
(3) Sanders, A. and Kunst, M., Solid-State Electronics 34,1007 (1991)Google Scholar