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Surface Oxidation Study of Silicon-Doped GaAs Wafers by Ftir Spectroscopy

Published online by Cambridge University Press:  03 September 2012

R.-H. Chang ,
M. Al-Sheikhly ,
A. Christou  and
C. Varmazis
R.-H. Chang
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
M. Al-Sheikhly
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
A. Christou
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
C. Varmazis
Affiliation:
M/A-COM Microelectronic Division, IC Business Unit, 100 Chelmsford St., Lowell, MA 01851-2694
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Abstract

A surface study of Si-doped GaAs (100) oriented wafers treated with NH4OH and HC1 following exposure to fluorine containing plasma was conducted using fourier transform infrared spectroscopy (FTIR). These treatments were observed to produce various oxidation products, such as AS2O5 and GaO. Though inorganic salts, such as (NH4)3GaF6, can be formed on the Si-doped GaAs wafers during cleaning with hydrofluoric acid buffered with ammonium fluoride, the applied cleaning method which consisted of NH4OH and HCl treatments subsequent to exposure to fluorine containing plasma did not induce formation of any inorganic salts. A small amount of hydroxide group was also presented in the samples. Water molecules and ammonium hydroxide can be sources of OH which can then be incorporated interstitially into the wafer surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 75
Copyright
Copyright © Materials Research Society 1997

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