No CrossRef data available.
Article contents
Surface Electronic Properties of Ionimplanted Laser-Annealed Si(111)
Published online by Cambridge University Press: 15 February 2011
Abstract
Highly-degenerate As-doped n-type and B-doped p-type Si(l11)−(1×1) surfaces have been prepared via ion implantation and laser annealing and studied using photoemission. For As concentrations of ∼4–7%, surface states become very different from those for intrinsic Si(l11)−(1×1) and the Fermi level EF at the surface moves to the conduction band minima resulting in a zero height n-type Schottky barrier. Emission from the conduction band minima has been directly viewed in momentum space.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1982