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Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment

Published online by Cambridge University Press:  15 March 2011

S.O. Kucheyev ,
J.S. Williams ,
C. Jagadish ,
J. Zou ,
M. Toth ,
M.R. Phillips ,
H.H. Tan ,
G. Li  and
S.J. Pearton
S.O. Kucheyev
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia, ( E-mail: [email protected])
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia, ( E-mail: [email protected])
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia, ( E-mail: [email protected])
J. Zou
Affiliation:
Electron Microscope Unit and Australian Key Center for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006, Australia
M. Toth
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
M.R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia, ( E-mail: [email protected])
G. Li
Affiliation:
Ledex Corporation, 23F, No 91 Chung-sun 2nd Rd, Kaohsiung, Taiwan
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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Abstract

The damage build-up and amorphization behavior in wurtzite GaN films under a wide range of implant conditions are studied by Rutherford backscattering / channeling spectrometry, transmission electron microscopy, and cathodoluminescence spectroscopy. A strong surface peak of lattice disorder, in addition to the expected damage peak in the region of the maximum of nuclear energy loss, has been observed for all implant conditions of this study. Capping of GaN with SiOx and SixNy layers prior to implantation does not eliminate surface disordering. This may suggest that nitrogen loss is not the main reason for the observed enhanced surface disorder, but, rather, the GaN surface acts as a strong sink for migrating point defects. However, pronounced loss of N during ion bombardment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400°C leads to complete decomposition of the near-surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T7.9.1
Copyright
Copyright © Materials Research Society 2000

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References

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