Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:27:44.719Z Has data issue: false hasContentIssue false

Surface Composition Changes and Ablation Dynamics in Excimer Laser Irradiated CdTe

Published online by Cambridge University Press:  16 February 2011

P. D. Brewer
Affiliation:
Hughes Research Laboratories 3011 Malibu Canyon Road Malibu, CA 90265
J. J. Zinck
Affiliation:
Hughes Research Laboratories 3011 Malibu Canyon Road Malibu, CA 90265
G. L. Olson
Affiliation:
Hughes Research Laboratories 3011 Malibu Canyon Road Malibu, CA 90265
Get access

Abstract

We have investigated the dynamics of KrF excimer laser ablation of CdTe and the fluence dependent changes in surface stoichiometry that accompany the laser ablation process. The composition of the CdTe surface was reversibly controlled between stoichiometric and a Te-rich condition by varying the laser fluence over the range from 15–65 mJ/cm2. The primary species ejected from the irradiated surface were Cd atoms and Te2 molecules. Their velocity distributions as measured by time-of-flight mass spectrometry were found to be Maxwellian. From the analysis of the velocity distributions, the preferential desorption of surface atoms, and the reversible nature of the process, we conclude that the desorption is due to a photo-thermal mechanism which mediates the competition between Te2 formation and desorption and the desorption of Cd atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For example see: Wrobel, J.M. and Dubowski, J.J., Appl. Phys. Lett. 55. 469 (1989).Google Scholar
2. Azema, A., SPE 998. 72 (1988).Google Scholar
3. Namiki, A., Cho, S., and Ichige, K., Jpn. J. Appl. Phys. 26. 39 (1987).Google Scholar
4. Nakayama, N., Surf. Sci. 133 101 (1983)Google Scholar
5. Ichige, K., Matsumoto, Y., and Namiki, A., Nucl. Instr. Meth. Phys. Res. B33. 820 (1988).Google Scholar
6. Donnelly, V.M., McCrary, V., and Brasen, D., Mat. Res. Soc. Symp. Proc. L5. 567 (1987).Google Scholar
7. Strizker, B., Pospieszczyk, A., and Tagle, J.A., Phys. Rev. Lett. 47. 356 (1981), A. Pospieszczyk, M.A. Harith, and B. Strizker, J. Appl. Phys. 54. 3176 (1983).Google Scholar
8. Namiki, A., Kawai, T., Yasuda, Y., and Nakamura, T., Jpn. J. Appl. Phys. 24. 270 (1985).Google Scholar
9. Baeri, P. and Campisano, S.V., in Laser Annealing of Semiconductors, ed. by Poate, J.M. and Mayer, J.W. (Academic Press, New York, 1982) pp 75109.Google Scholar
10. Brewer, P.D., Zinck, J.J., and Olson, G.L., submitted to Appl. Phys. Lett. 1990.Google Scholar