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Surface Chemistry of GaAs(100) after Treatment with Aqueous H3PO4 Solution

Published online by Cambridge University Press:  22 February 2011

V. A. Burrows  and
V. S. G. Kondapuram
V. A. Burrows
Affiliation:
Arizona State University, Dept. of Chemical, Bio, and Materials Engineering and Center for Solid State Electronics Research, Tempe, AZ 85287–6006
V. S. G. Kondapuram
Affiliation:
Arizona State University, Dept. of Chemical, Bio, and Materials Engineering and Center for Solid State Electronics Research, Tempe, AZ 85287–6006
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Abstract

The interaction of semiconductor surfaces with aqueous acid solutions is important in chemical cleaning and etching. Wet chemical treatments are advantageous because they cause little damage to the surface and do not usually require high temperatures. The surface chemistry of GaAs after treatment with phosphoric acid was studied using multiple internal reflection infrared spectroscopy. The treatment left behind a thin film containing several types of PxOy bonds. The chemical nature of the film was observed to change with time as new species would form on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 117
Copyright
Copyright © Materials Research Society 1993

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References

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