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Surface Characterization of Silicon Carbide Following Shallow Implantation of Platinum Ions for High Temperature Hydrogen Sensing Applications

Published online by Cambridge University Press:  01 February 2011

Claudiu Muntele ,
Satilmis Budak ,
Iulia Muntele  and
Daryush Ila
Claudiu Muntele
Affiliation:
[email protected], Alabama A&M University, Physics, 4900 Meridian Street, PO Box 1447, Normal, AL, 35762, United States
Satilmis Budak
Affiliation:
[email protected], Alabama A&M University, Physics, 4900 Meridian Street, PO Box 1447, Normal, 35762, United States
Iulia Muntele
Affiliation:
[email protected], Alabama A&M University, Physics, 4900 Meridian Street, PO Box 1447, Normal, 35762, United States
Daryush Ila
Affiliation:
[email protected], Alabama A&M University, Physics, 4900 Meridian Street, PO Box 1447, Normal, 35762, United States
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Abstract

Silicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent depth profile modifications of tungsten electrical contacts deposited on silicon carbide substrates.

Keywords

devicesion beam analysissensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 929: Symposium II – Materials in Extreme Environments , 2006 , 0929-II03-03
Copyright
Copyright © Materials Research Society 2006

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References

1. Olowolafe, J. O. et al., Thin Solid Films 479 (2005) 59–63.Google Scholar
2. Muntele, C. I., Sarkisov, S., Muntele, I., ILA, D., Mat. Res. Soc. Symp. Proc. (2005).Google Scholar
3. Doolittle, L. R., Thompson, M. O., RUMP, Computer Graphics Service, 2002.Google Scholar