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Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion

Published online by Cambridge University Press:  26 February 2011

Nicole Herbots ,
D. Gloesener ,
E. J. Van Loenen  and
A. E. M. J. Fischer
Nicole Herbots
Affiliation:
Guest scientist at the Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, from FAI-UCL, 3, pl. du Levant, B-1348, Louvain-La-Neuve, Belgium.
D. Gloesener
Affiliation:
FAI-UCL, 3, pl. du Levant, B-1348, Louvain-La-Neuve, Belgium.
E. J. Van Loenen
Affiliation:
FOM-.Instituut, Kruislaan 407, I098-SJ Amsterdam, The Netherlands.
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Abstract

Arsenic segregation at Si(lO0) surfaces during annealing (890–970°C) has been studied by medium energy ion scattering (MEIS), Rutherford backscattering spectrometry (RBS), ion scattering spectrometry (ISS), and Auger electron spectroscopy (AES). The unique depth resolution of MEIS revealed that arsenic segregated in a two-dimensional layer at the clean Si surface during annealing. For a surface with a native oxide the arsenic piled up at the Si/oxide interface. This segregation peak was no longer present on the Si surface after conventional contact opening. By metallizing arsenic junctions with Al:Si, 1% it was found that a segregation annealing step inhibited Al/Si interdiffusion. Diodes as shallow as 180 nm could be metallized without spiking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 613
Copyright
Copyright © Materials Research Society 1985

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References

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