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Surface Behavior and Lattice Relaxation of SiGe/Si Strained Epitaxial Heterostructures

Published online by Cambridge University Press:  25 February 2011

Kevin H. Chang  and
H. Ming Liaw
Kevin H. Chang
Affiliation:
Analog Integrated Circuit Division, Semiconductor Products Sector, Motorola, Inc. 2200 W. Boardway, MD: M285, Mesa, AZ 85202
H. Ming Liaw
Affiliation:
Core Technology, Semiconductor Products Sector, Motorola, Inc., 5005 E. McDowell, MD: A170, Phoenix, AZ 85008
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Abstract

The correlation between the surface morphology and the lattice relaxation in strained SiGe/Si heteroepitaxy has been studied. It is found that the surface crosshateched pattern develops as the strained epilayer thickness increases. The effect of thermal annealing and boron dopant level has also been studied. The result suggests that the crosshatched morphology on the surface is constituted by surface slip steps of glissile dislocation motion in the strained epitaxial growth processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 719
Copyright
Copyright © Materials Research Society 1993

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References

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