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Surface and Subsurface Morphology of Laser Bean Annealed Auge/Gaaa Ohmic Contacts

Published online by Cambridge University Press:  15 February 2011

O. Aina ,
J. Norton ,
W. Katz ,
G. Smith  and
K. Rose
O. Aina
Affiliation:
General Electric Co., Corporate Research and Development, Schenoctady, New York 12301
J. Norton
Affiliation:
General Electric Co., Corporate Research and Development, Schenoctady, New York 12301
W. Katz
Affiliation:
General Electric Co., Corporate Research and Development, Schenoctady, New York 12301
G. Smith
Affiliation:
General Electric Co., Corporate Research and Development, Schenoctady, New York 12301
K. Rose
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12181
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Abstract

A study of the pulsed laser annealing of AuGe films on GaAs using a Nd:YAG laser has revealed differences between the surface and subsurface morfhologies. At laser energy densities lower than 1.1 J/cm2 , the surface retained the smooth, “golden” appearance of deposited AuGe films, while evidence of damage was observed below the surface. At higher energy densities, surface damage was observed. SIMS profiles of Ga and As in the AuGe layer and a laser heating model have been used to explain the presence or absence of damage in terms of the outdiffusion of As and Ga through the laser created melt which leads to the presence or absence of Ga and As at the surface and below the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 671
Copyright
Copyright © Materials Research Society 1982

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References

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