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Surface and Reactor Effects on Selective Copper Deposition from Cu(hfac)tmvs

Published online by Cambridge University Press:  22 February 2011

John A. T. Norman ,
David A. Roberts  and
Arthur K. Hochberg
John A. T. Norman
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
David A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
Arthur K. Hochberg
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
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Abstract

The selectivity of OMCVD copper films grown at 160°C/500 mTorr from the volatile liquid precursor Cu(hfac)tmvs was evaluated for various commercial 6” wafers patterned with either TiN/SiO2 or TiN/Si3N4. By processing wafers “as received”, only thermal grown SiO2 consistently resisted metallization, allowing copper films up to 1.5μ thick to be grown on TiN. For SiO2, films containing H2O, especially from PECVD, only blanket deposition was observed. However, by a utilizing simple thermal predeposition dehydration some of these SiO2 films were conditioned to give selective deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 347
Copyright
Copyright © Materials Research Society 1993

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References

1. a. Beach, D. B., LeGoues, F. K. and Hu, C., Chem. Mater. 2, 216 (1990)Google Scholar
b. Lechohier, B., Philippoz, J. M. and Van den Bergh, H., J. Vac. Sci. Technol. B. 10 (1) 262 (1992).Google Scholar
c. Fine, S. M., Dyer, P. N., Norman, J. A. T., Muratore, B. A. and Iampietro, R. L. Chemical Perspectives of Microelectronic Materials II edited by Interrante, L. V., Jensen, K. F., Dubois, L. H., Gross, M. E. (Mat. Res. Symp. Proc. vol 204 Pittsburgh PA 1991) p. 415–420.Google Scholar
2. a. Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., Hochberg, A. K. J. De Physique IV 1, C2–273 (1991)Google Scholar
b. Reynolds, S. K., Smart, C. J., Baran, E. F., Barun, T. H., Larson, C. E. and Brock, P. J. Appl. Phys. Lett. 59 (18) 2332 (1991)Google Scholar
3. Baum, T. H. and Larson, C. E. Chem. Mater. 4, 365 (1992).Google Scholar
4. Shin, H. K., Chi, K-M, Hampden-Smith, M. J., Kodias, T. T., Farr, J. D. and Paffert, M., Adv. Mater. 3 (5) 246 (1991).Google Scholar
5. a. Shy, Y.-T., Murarka, S. P., Shepard, C. L., Lanford, W. A., Proc. Advanced Metallizations in Microelectronics, ed. Kratz, A., Murarka, S. P., Applebaum, A., (Mater. Res. Soc., vol 181, Pittsburgh, PA, 1990), p. 537.Google Scholar
b. Hoshino, K., Yangi, H., Tsuchikawa, H., TiN-Encapsulized Copper Interconnects for ULSI Applications, IEEE VMIC Conference, 1989, p 226.Google Scholar
6. Norman, John A. T., Muratore, Beth A., U.S. Patent No 5,085, 731 (4 February 1992).Google Scholar
7. a. Dubois, L. H., Jefferies, P. M. and Girolami, G. S., Advanced Metallization for ULSI Applications, edited by Rana, V. V. S., Joshi, R. V. and Ohdomari, I. (Conf. Proc. ULSI-VII Mat. Res. Soc. Pittsburgh, PA 1992) p. 375.Google Scholar
b. Griolami, G. S., Jeffries, P. M., Dubouis, L. H., to be published in J. Amer. Chem. Soc., Jan (1993)Google Scholar
8. Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., Hochberg, A. K., Dubois, L. H., presented at the E-MRS meeting (Symposium C: Chemistry of Electron. Materials) Strasbough, France, June 2–5 (1992).Google Scholar
9. Farkus, J., Hampden-Smith, M. J., Kodias, T. T., Hardcastle, F. D. and Peden, C. H. F., presneted at the E-MRS meeting (Symposium C: Chemistry of Electron. Materials) Strasbough, France, June 2–5 (1992).Google Scholar
10. Mackens, V., Merkt, V., Thin Solid Films 97, 53 (1982).Google Scholar
11. Hochberg, A. K., Gelernt, B. Users Guide for Glass Deposition with LTO-410TM Source Material. - published by Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009, p. 26 (1990).Google Scholar