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Surface and Interface Stress in Epitaxial Growth

Published online by Cambridge University Press:  15 February 2011

H. Ibach  and
A. Grossmann.
H. Ibach
Affiliation:
Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D 52425 Jülich, Germany
A. Grossmann.
Affiliation:
Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D 52425 Jülich, Germany
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Abstract

Recent experimental measurements on the interface stresses in two heteroepitaxial systems have shown that the interface stresses were unexpectedly large. For thin deposited layers, the interface stress can exceed the stress caused by the lattice mismatch by far. Arguments are presented which indicate that the surface stress may be caused by the charge transfer between the deposit and the substrate. The consequences for the critical thickness of pseudomorphic films are discussed and it is shown that depending on the sign of the interface stress and the mismatch the critical thickness can be either reduced or enhanced by a large factor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 15
Copyright
Copyright © Materials Research Society 1997

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References

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