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Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire

Published online by Cambridge University Press:  11 February 2011

Sverre V. Pettersen ,
Thomas Tybell ,
Arne Rønnekleiv ,
Stig Rooth ,
Veit Schwegler  and
Jostein K. Grepstad
Sverre V. Pettersen
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Thomas Tybell
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Arne Rønnekleiv
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Stig Rooth
Affiliation:
Alcatel Space Norway AS, Knudsrødveien 7, N-3190 Horten, NORWAY
Veit Schwegler
Affiliation:
Department of Optoelectronics, University of Ulm, Albert Einstein Allee 45, D-89081 Ulm, GERMANY.
Jostein K. Grepstad
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
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Abstract

We report on fabrication and measurement of a surface acoustic wave resonator prepared on ∼10m thick GaN(0001) films. The films were grown by metal-organic vapor phase epitaxy on a c-plane sapphire substrate. The surface morphology of the films were examined with scanning electron and atomic force microscopy. A metallic bilayer of Al/Ti was subsequently evaporated on the nitride film surface. Definition of the resonator interdigital transducers, designed for a wavelength of λ=7.76m, was accomplished with standard UV lithography and lift-off. S-parameter measurements showed a resonator center frequency f0=495MHz at room temperature, corresponding to a surface acoustic wave velocity of 3844m/s. The insertion loss at center frequency was measured at 8.2dB, and the loaded Q-factor was estimated at 2200. Finally, measurements of the resonator center frequency for temperatures in the range 25–155°C showed a temperature coefficient of -18ppm/°C. The intrinsic GaN SAW velocity and electromechanical coupling coefficient were estimated at νSAW=383 1m/s and K2=1.8±0.4·10−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.37
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Nakamura, S. and Fasol, G., The Blue Laser Diode, Springer-Verlag, Berlin Heidelberg (1997).Google Scholar
2. O'Clock, G. D. Jr and Duffy, M. T., Appl. Phys. Lett. 23, 55 (1973).Google Scholar
3. Deger, C., Born, E., Angerer, H., Ambacher, O., Stutzmann, M., Hornsteiner, J., Riha, E. and Fischerauer, G., Appl. Phys. Lett. 72, 2400 (1998).Google Scholar
4. Smith, W. R., J. Appl. Phys. 42, 3016 (1971).Google Scholar
5. Khan, A., Rimeika, R., Čiplys, D., Gaska, R. and Shur, M. S., Phys. Stat. Sol. (B), 216, 477 (1999).Google Scholar
6. Gil, B. (ed.), Group III Nitride Semiconductor Compounds - Physics and Applications, Oxford University Press, Oxford (1998).Google Scholar
7. Campbell, C. K., Surface Acoustic Wave Devices for Mobile and Wireless Communications, Academic Press, New York (1998).Google Scholar
8. Vollmer, J. and Gandolfo, D., Science, 175, 129 (1972).Google Scholar
9. Čiplys, D., Rimeika, R., Gaska, R., Shur, M. S., Khan, A. and Yang, J.W., Electron. Lett. 36, 591 (2000).Google Scholar
10. Chin, V. W., Tansley, T. L. and Osotchan, T., J. Appl. Phys. 75, 7365 (1994).Google Scholar
11. Polian, A., Grimsditch, M., Grzegory, I., J. Appl. Phys. 79, 3343 (1996).Google Scholar
12. Bykhovski, A. D., Gelmont, B. L. and Shur, M. S., J. Appl. Phys. 81, 6332 (1997).Google Scholar
13. Edgar, J. H. (ed.), Properties of group III-Nitrides, EMIS data reviews series Vol. 11, INSPEC (1994).Google Scholar
14. Auld, B. A., Acoustic Fields and Waves in Solids, John Wiley & Sons, New York (1973).Google Scholar
15. Rooth, S., Halvorsen, E., Bardal, S. and Tuset, E.D., IEEE Ultrason. Symp. Proc. 1, 329 (2000).Google Scholar
16. Lee, S.-H., Jeong, H.-H., Bae, S.-B., Choi, H.-C., Lee, J.-H. and Lee, Y.-H., IEEE Trans. on Electron. Dev. 48, 524 (2001).Google Scholar
17. Jeong, H.-H., Kim, S.-K., Jung, Y.-C., Choi, H.-C., Lee, J.-H. and Lee, Y.-H., Phys. Stat. Sol. (A), 188, 247 (2001).Google Scholar
18. Mitsuyu, T., Ono, S. and Wasa, K., J. Appl. Phys. 51, 2464 (1980).Google Scholar