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Surface Acoustic Wave Detection of Large Lattice Relaxation of Metastable EL2 in LT-GaAs

Published online by Cambridge University Press:  15 February 2011

Ken Khachaturyan ,
Eicke R. Weber  and
Richard M. White
Ken Khachaturyan
Affiliation:
Dept. of Materials Science and Mineral Engineering, University of California and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA
Eicke R. Weber
Affiliation:
Dept. of Materials Science and Mineral Engineering, University of California and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA
Richard M. White
Affiliation:
Berkeley Sensor & Actuator Center, Electronics Research Laboratory, Dept. of Electrical Engineering & Computer Sciences, University of California, Berkeley, CA
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Abstract

For the first time, surface acoustic waves (SAWs) were used to study the lattice relaxation of metastable defects. A persistent increase of as much as 0.4% of the SAW velocity at low temperatures was observed after illumination of LT-GaAs; this increase could be quenched by annealing at 120–130°K. This behaviour is caused by the metastable transition of EL2-like AsGa defects and constitutes the direct experimental proof of the illumination induced large lattice relaxation of this defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 131
Copyright
Copyright © Materials Research Society 1992

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References

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