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Suppression of Secondary Defects in Silicon by Carbon Implantation

Published online by Cambridge University Press:  21 February 2011

Todd W. Simpson  and
Ian V. Mitchell
Todd W. Simpson
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, N6A 3K7
Ian V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, N6A 3K7
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Abstract

We have examined the role of co-implanted carbon in suppressing the formation of secondary defects in self-ion irradiated Si(100). Implantation of 540 keV energy Si ions to a fluence of 1015 cm-2 followed by a 900°C, 15 minute anneal leads to the growth of an extended defect band at the end-of-range. Range matched carbon co-implantation can be used to modify this defect development dramatically. While direct co-implantation of carbon and silicon ions has no apparent effect on the formation of extended defects, such formation can be suppressed when the implanted C is incorporated substitutionally into the silicon lattice. Ion channelling and nuclear reaction analysis show that substitutional carbon is removed from substitutional sites during Si ion irradiation. In this case, it is proposed that excess interstitial silicon ions which normally lead to the growth of secondary defects will occupy the lattice sites previously occupied by carbon ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 847
Copyright
Copyright © Materials Research Society 1996

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References

1 Wu, W.K. and Washburn, J., J. Appl Phys. 48, 3742 (1977)Google Scholar
2 Jones, K.S., Prussin, S. and Weber, E.R., Appl. Phys. A45, 1 (1988)Google Scholar
3 Eaglesham, D.J., Astolk, P., Gossmann, H.-J. and Poate, J.M., Appl. Phys. Lett. 65 (18), 2305 (1994)Google Scholar
4 Cowern, N.E.B., van de Walle, G.F.A, Zalm, P.C. and Vandenhoudt, D.W.E., Appl. Phys. Lett. 65(23), 2981 (1994)Google Scholar
5 Cho, K., Numan, M., Finstad, T.G., Chu, W.K., Liu, J. and Wortman, J.J., Appl. Phys. Lett. 47 (12), 1321 (1985)Google Scholar
6 Stolk, P.A., Eaglesham, D.J., Gossmann, H.-J and Poate, J.M., Appl. Phys. Lett. 66 (11), 1370 1995 Google Scholar
7 Wong, H., Cheung, N.W., Chu, P.K., Liu, J. and , J.W. Mayer, Appl. Phys. Lett. 52 (12), 1023 (1988)Google Scholar
8 Tamura, M., Ando, T. and Ohyu, K., Nucl. Inst. Meth. B59, 572 (1991).Google Scholar
9 Liefting, J.R., Custer, J.S., and Saris, F.W., Mater. Res. Soc. Symp. Proc. 235, 179 (1992)Google Scholar
10 Nishikawa, S. and Yamaji, T., Appl. Phys. Lett. 62 (3), 303 (1993)Google Scholar
11 Cacciato, H.A., Ph.D. thesis, FOM Institute for Atomic and Molecular Physics, Amsterdam, 1994 Google Scholar
12 Goldberg, R.D., Simpson, T.W., Mitchell, I.V. and Schultz, P.J., Mat. Res. Soc. Symp. Proc, 316, 39 (1994)Google Scholar
13 Simpson, T.W., Goldberg, R.D., Mitchell, I.V., Appl. Phys. Lett. 67 (19) 2857 (1995)Google Scholar
14 Strane, J.W., Stein, H.J., Lee, S.R., Doyle, B.L., Picraux, S.T. and Mayer, J.W., Appl. Phys. Lett, 63 (20), 2786 (1993)Google Scholar
15 Biersack, J. and Haggmark, L., Nucl. Instr. and Meth. 174 257 (1980)Google Scholar