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Suppression of nucleation during the aluminum-induced layer exchange process

Published online by Cambridge University Press:  01 February 2011

Jens Schneider ,
Juliane Klein ,
Andrey Sarikov ,
Martin Muske ,
Stefan Gall  and
Walther Fuhs
Jens Schneider*
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Juliane Klein
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Andrey Sarikov
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Martin Muske
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Stefan Gall
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Walther Fuhs
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. Silizium Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
*
* corresponding author: phone: 0049 30 8062 1395, fax: 0049 30 8062 1333, e-mail: [email protected]
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Abstract

Formation of polycrystalline silicon (poly-Si) thin films on inexpensive glass substrates is of great interest for large area electronic devices. Large grain sizes are desirable to reduce grain boundary effects. In the aluminum-induced layer exchange process Al/a-Si bi-layers exchange their positions with a concurrent crystallization of the amorphous Si (a-Si) in a simple annealing step. The process is characterized by the self regulated suppression of nucleation by existing grains resulting in large grain sizes above 10 μm. This paper elucidates the process within the Al Si phase diagram. The change in Si concentration within the Al is shown to cause the nucleation suppression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A2.2
Copyright
Copyright © Materials Research Society 2005

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Footnotes

1

On leave from V. Lashkarev Institute of Semiconductor Physics NAS Ukraine

References

[1] Herd, S. R., Chaudhari, P., and Brodsky, M. H., “Metal contact induced crystallization in films of amorphous silicon and germanium”, J. Non-Cryst. Solids 7, (1972), 309.10.1016/0022-3093(72)90267-0Google Scholar
[2] Schneider, J., Klein, J., Muske, M., Schöpke, A., Gall, S., and Fuhs, W., “Aluminium-induced crystallisation of amorphous silicon: Influence of oxidation conditions”, Proc. of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, (2003), 106.Google Scholar
[3] Nast, O., Puzzer, T., Koschier, L. M., Sproul, A. B., and Wenham, S. R., “Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature”, Appl. Phys. Lett. 73, (1998), 3214.10.1063/1.122722Google Scholar
[4] Nast, O. and Hartmann, A. J., “Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon”, J. Appl. Phys. 88, (2000), 716.10.1063/1.373727Google Scholar
[5] Gall, S., Muske, M., Sieber, I., Nast, O., and Fuhs, W., “Aluminum-induced crystallization of amorphous silicon”, J. Non-Cryst. Solids 299-302, (2002), 741.10.1016/S0022-3093(01)01108-5Google Scholar
[6] Nast, O. and Wenham, S. R., “Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization”, J. Appl. Phys. 88, (2000), 124.10.1063/1.373632Google Scholar
[7] Spinella, C., Lombardo, S., and Priolo, F., “Crystal grain nucleation in amorphous silicon”, J. Appl. Phys. 84, (1998), 5383.10.1063/1.368873Google Scholar