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Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

Published online by Cambridge University Press:  31 January 2011

Tingyi Gu ,
Mohamed A El-Emawy ,
Kai Yang ,
Andreas Atintz  and
Luke F Lester
Tingyi Gu
Affiliation:
[email protected]
Mohamed A El-Emawy
Affiliation:
[email protected], United States
Kai Yang
Affiliation:
[email protected], University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico, United States
Andreas Atintz
Affiliation:
[email protected], Unviersity of New Mexico, Center for High Technology Materials, Albuqueruqe, New Mexico, United States
Luke F Lester
Affiliation:
[email protected], United States
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Abstract

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells. The lower open-circuit voltage in the smaller GaAs control cells is caused by strong Shockley-Read-Hall (SRH) recombination on the perimeter, which leads to a shoulder in the semi-logarithmic dark IV curve. However, despite the fact that the DWELL and GaAs control cells were processed simultaneously, the shoulders on the dark IV curve disappear in all the DWELL cells over the whole processed wafer. As has been discussed in previous research on transport in QDs, it is believed that the DWELL cells inhibit lateral diffusion current and thus edge recombination by collection first in the InGaAs quantum well and then trapping in the embedded InAs dots. This conclusion is further supported by the almost constant current densities of the different area DWELL devices as a function of voltage.

Keywords

semiconductingoptoelectronicself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q02-07
Copyright
Copyright © Materials Research Society 2010

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