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Suppression of Crystal Nucleation in Amorphous Si Thin Films by High Energy Ion Irradiation at Intermediate Temperatures

Published online by Cambridge University Press:  26 February 2011

James S. Im ,
Jung H. Shin  and
Harry A. Atwater
James S. Im
Affiliation:
California Institute of Technology, Pasadena, CA. 91125
Jung H. Shin
Affiliation:
California Institute of Technology, Pasadena, CA. 91125
Harry A. Atwater
Affiliation:
California Institute of Technology, Pasadena, CA. 91125
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Abstract

In situ electron microscopy has been used to observe crystal nucleation and growth in amorphous Si films. Results demonstrate that a repeated intermediate temperature ion irradiation/thermal annealing cycle can lead to suppression of nucleation in amorphous regions without inhibition of crystal growth of existing large crystals. Fundamentally, the experimental results indicate that the population of small crystal clusters near the critical cluster size is affected by intermediate temperature ion irradiation. Potential applications of the intermediate temperature irradiation/thermal anneal cycle to lateral solid epitaxy of Si and thin film device technology are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 357
Copyright
Copyright © Materials Research Society 1991

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