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Subtleties of Capacitance Transients in Amorphous Silicon
Published online by Cambridge University Press: 10 February 2011
Abstract
Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients(“slow relaxation”).
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- Copyright © Materials Research Society 1996