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Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H

Published online by Cambridge University Press:  25 February 2011

Yuan- Min Li ,
Warren A. Turner ,
Choochon Lee  and
William Paul
Yuan- Min Li
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Warren A. Turner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Choochon Lee
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
William Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

Glow discharge a-Ge:H films produced at substrate temperatures (Tδ) between 50°C and 350°C, with and without a top a-Si:H capping layer, have been studied. The uncapped samples produced at Tδ < 250°C suffer severe post-deposition atmospheric contamination, resulting in orders of magnitude of unstable increase in both the photoresponse and dark conductivity. The capped samples, which have very much reduced immediate post-deposition contamination, show only small increases in the efficiency-mobility-lifetime product (ŋμτ) with increasing Tδ. This contrasts with the results of earlier similar studies on uncapped samples, which showed a peak in either the photoconductivity1 or the ratio of photoconductivity to dark conductivity2 for 150°C < Tδ < 2000C. We have also observed a decrease in the bandgap, a narrowing of the band-tails, an increase in the index of refraction, and a reduction of hydrogen content of the films with increasing Tδ.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 187
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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