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Substrate Induced Crystallinity in Reactive Sputter Deposition of Hydrogenated Silicon

Published online by Cambridge University Press:  21 February 2011

G. F. Feng ,
M. Katiyar ,
J. R. Abelson  and
N. Maley
G. F. Feng
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science, and Engineering, University of Illinois, Urbana, IL 61801.
M. Katiyar
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science, and Engineering, University of Illinois, Urbana, IL 61801.
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science, and Engineering, University of Illinois, Urbana, IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science, and Engineering, University of Illinois, Urbana, IL 61801.
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Abstract

We use in situ multi-wavelength ellipsometry to study growth of hydrogenated amorphous silicon and crystalline silicon deposited by reactive DC magnetron sputtering. Crystal silicon covered with native oxide and oxide free crystal silicon are used as substrates. Deposition on c-Si/ox over a wide range of conditions yields amorphous films, and the growth proceeds with formation of small islands, regardless of hydrogen partial pressure. Growth on oxide free c-Si, on the other hand, is hydrogen dependent. Even at a low hydrogen pressure, a layer with mixed phase of c-Si and a-Si:H begin to appear near the c-Si substrate. This layer thickness and its c-Si fraction increase with hydrogen pressure. Bombardment of growing surface by energetic particles, both silicon and hydrogen species, appears to lead to the crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 709
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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