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Substrate Effects on the Kinetics of Solid Phase Crystallization In a-Si

Published online by Cambridge University Press:  15 February 2011

L. Haji ,
P. Joubert ,
M. Guendouz ,
N. Duhamel  and
B. Loisel
L. Haji
Affiliation:
Laboratoire Composants et Systèmes de Visualisation, Université de Rennes I, I.U.T. de Lannion, 22302 Lannion Cedex, France
P. Joubert
Affiliation:
Laboratoire Composants et Systèmes de Visualisation, Université de Rennes I, I.U.T. de Lannion, 22302 Lannion Cedex, France
M. Guendouz
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
N. Duhamel
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
B. Loisel
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
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Abstract

The effect of substrate nature on the solid phase crystallization at 600 °C of a-Si deposited by low pressure chemical vapor deposition is investigated by x-ray diffraction and transmission electron microscopy. The nucleation rate varies slightly resulting to a weak variation in the final grain sizes as a function of the substrate type. In all cases the grain growth mode is found to be three dimensional. In contrary, a drastic effect of the substrate is observed for films deposited by plasma enhanced CVD. Fast crystallization is obtained on indium tin oxide (ITO) resulting to small grain poly-Si, whereas the crystallization is retarded on glass leading to an increase in the grain size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 177
Copyright
Copyright © Materials Research Society 1992

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References

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