Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-05T12:57:26.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate and Temperature Dependent Morphology of rf-Sputtered Indium Nitride Films

Published online by Cambridge University Press:  26 February 2011

T. J. Kistenmacher ,
D. Dayan ,
R. Fainchtein ,
W. A. Bryden ,
J. S. Morgan  and
T. O. Poehler
T. J. Kistenmacher
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
D. Dayan
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
R. Fainchtein
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
W. A. Bryden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
J. S. Morgan
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
T. O. Poehler
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20707-6099
Get access

Abstract

The morphology of rf-sputtered films of the wide bandgap semiconductor InN on a variety of substrates over a range of temperatures have been studied by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). For films deposited on fused quartz and the (111) face of silicon, there is a transition from an off-normal inclination to a fully textured (0001) film with increasing substrate temperature. In contrast, films deposited on the (0001) face of sapphire are textured or heteroepitaxial depending on the substrate temperature. For the heteroepitaxial domains, the rotation of the reciprocal lattice of InN by 30° to that of the sapphire substrate was established by X-ray precession photography. Finally, STM has proven to be a practicable method for non-destructively determining the substrate and temperature dependence of the grain size and surface roughness of these textured and heteroepitaxial films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 573
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pankove, J. I., J. Lumin. 17, 114 (1973).Google Scholar
2. Sasaki, T. and Zembutsu, S., J. Appl. Phys. 61, 2533 (1987).Google Scholar
3. Tansley, T. L. and Foley, C. P., Electron. Lett. 20, 1066 (1984).Google Scholar
4. Bryden, W. A., Morgan, J. S., Kistenmacher, T. J., Dayan, D., Fainchtein, R., and Poehler, T. O., Proc. Mater. Res. Soc. in press.Google Scholar
5. Fainchtein, R., Dayan, D., Bryden, W. A., Murphy, J. C., and Poehler, T. O., in Review of Progress in Quantitative NDE (1990), in press.Google Scholar
6. Morgan, J. S., Kistenmacher, T. J., Bryden, W. A., and Poehler, T. O., Proc. Mater. Res. Soc., in press.Google Scholar