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Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams

Published online by Cambridge University Press:  25 February 2011

M.-A. Trauwaert ,
J. Vanhellemont ,
E. Simoen ,
C. Claeys ,
B. Johlander ,
R. Harboe-Sörensen ,
L. Adams  and
P. Clauws
M.-A. Trauwaert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
B. Johlander
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
R. Harboe-Sörensen
Affiliation:
ESTEC, European Space Agency, Keplerlaan 1, NL-2200 AG Noordwijk, Netherlands.
L. Adams
Affiliation:
ESTEC, European Space Agency, Keplerlaan 1, NL-2200 AG Noordwijk, Netherlands.
P. Clauws
Affiliation:
RUG, Krijgslaan 281 SI, B-9000 Gent, Belgium.
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Abstract

The results are presented of a fundamental study of electrically active damage introduced in silicon diodes by irradiation with the fission products resulting from the decay of a 252Cf source and with high energy protons. The influence of the oxygen content of the silicon substrate and the irradiation type on the damage formation is investigated using deep level transient spectroscopy. A radiation hardening effect by interstitial oxygen is observed. Bom types of irradiation create the same dominant defect levels but with different relative densities. The identification of the induced deep levels are confirmed by isochronal annealing results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 93
Copyright
Copyright © Materials Research Society 1993

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References

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