Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-03T03:41:20.407Z Has data issue: false hasContentIssue false
  • English
  • Français

Substitutionally Doped II–VI Semiconductor Films and Layered Structures

Published online by Cambridge University Press:  26 February 2011

J. F. Schetzina ,
R. L. Harper ,
J. Han ,
S. Hwang ,
N. C. Giles ,
Y. Lansari  and
J. W. Cook
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
R. L. Harper
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
J. Han
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
S. Hwang
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
N. C. Giles
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
J. W. Cook
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
Get access

Abstract

Photoassisted molecular beam epitaxy (PAMBE), in which the substrate is illuminated during film growth, is being employed in a new approach to controlled substitutional doping of II–VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The PAMBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using indium and antimony as n-type and p-type dopants, respectively. Double-crystal x-ray rocking curve data indicate that the doped epilayers are of high structural quality. Successful n-type doping of CdMnTe, a dilute magnetic semiconductor, with indium has also been achieved. Most recently, the photoassisted growth technique has been employed to prepare doped CdMnTe-CdTe quantum well structures and superlattices. In addition, HgCdTe films which exhibit excellent optical and electrical properties as well as exceptional structural perfection have been grown by the PAMBE technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 97
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 49, 1095 (1986).Google Scholar
2.Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 49, 1735 (1986).Google Scholar
3.Bicknell, R.N., Giles, N.C., and Schetzina, J.F., Appl. Phys. Lett. 50, 691 (1987).Google Scholar
4.Bicknell, R.N., Giles, N.C., and Schetzina, J.F., J. Vac. Sci. Technol. B 5, 701 (1987).Google Scholar
5.Giles, N.C., Bicknell, R.N., and Schetzina, J.F., J. Vac. Sci. Technol. A 5, 3064 (1987).Google Scholar
6.Bicknell, R.N., Giles, N.C., and Schetzina, J.F., J. Vac. Sci. Technol. A 5, 3059 (1987).Google Scholar
7.Uzar, C., Legros, R., Marfaing, Y., and Triboulet, R., Appl. Phys. Lett. 45, 879 (1984).Google Scholar
8.Marfaing, Y., Rev. de Phys. Appl. 12, 211 (1977).Google Scholar
9.Myers, T.H., Lo, Yawcheng, Bicknell, R.N., and Schetzina, J.F., Appl. Phys. Lett. 42, 247 (1983).Google Scholar
10.Myers, T.H., Schetzina, J.F., Magee, T.J., and Ormond, R.D., J. Vac. Sci. Technol. A 1, 1598 (1983).Google Scholar
11.Dreifus, D.L., Kolbas, R.M., Harris, K.A., Bicknell, R.N., Harper, R.L., and Schetzina, J.F., Appl. Phys. Lett. 51, 931 (1987).Google Scholar
12.Yamada, S., J. Phys. Soc. Jpn. 15, 1940 (1962).Google Scholar
13.Arias, J.M., Shin, S.H., Cheung, J.T., and Chen, J.S., J. Vac. Sci. Technol. A 5, 3133 (1987).Google Scholar