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Submicrometer scale growth morphology control for the making of photonic crystal structures

Published online by Cambridge University Press:  01 February 2011

E. Gil-Lafon ,
A. Trassoudaine ,
D. Castelluci ,
A. Pimpinelli ,
R. Saoudi ,
O. Parriaux ,
A. Muravaud  and
C. Darraud
E. Gil-Lafon
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Campus Universitaire des Cézeaux, 63177 Aubière Cedex, France
A. Trassoudaine
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Campus Universitaire des Cézeaux, 63177 Aubière Cedex, France
D. Castelluci
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Campus Universitaire des Cézeaux, 63177 Aubière Cedex, France
A. Pimpinelli
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Campus Universitaire des Cézeaux, 63177 Aubière Cedex, France
R. Saoudi
Affiliation:
LTSI UMR CNRS 5516, 23 rue du Docteur Paul Michelon, 42023 Saint-Etienne Cedex 02, France
O. Parriaux
Affiliation:
LTSI UMR CNRS 5516, 23 rue du Docteur Paul Michelon, 42023 Saint-Etienne Cedex 02, France
A. Muravaud
Affiliation:
LTSI UMR CNRS 5516, 23 rue du Docteur Paul Michelon, 42023 Saint-Etienne Cedex 02, France
C. Darraud
Affiliation:
IRCOM UMR CNRS 6615, Université de Limoges, 123 avenue A. Thomas, 87060 Limoges Cedex, France
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Abstract

The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.3
Copyright
Copyright © Materials Research Society 2004

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References

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