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Sub-grain Boundary Spacing in Directionally Crystallized Si Films Obtained via Sequential Lateral Solidification

Published online by Cambridge University Press:  14 March 2011

M. A. Crowder ,
A. B. Limanov  and
James S. Im
M. A. Crowder
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
A. B. Limanov
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
James S. Im
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
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Abstract

In this paper, we report on the average linear density of sub-grain boundaries that are found in directionally solidified microstructures obtained via sequential lateral solidification of Si thin films. Specifically, we have characterized the dependence of the sub-grain boundary density on the film thickness, incident energy density, and per-pulse translation distance. The investigation was confined to analyzing directionally solidified microstructures obtained using straight-line beamlets. It is found that the average spacing of the sub-grain boundaries depended approximately linearly on the film thickness, where it varied from 0.28m at a thickeness of 550Å to ∼0.75μm at 2,000 Å. In contrast, variations in either the energy density or the per-pulse translation distance within the investigated SLS process parameter domain were found to have a negligible effect on the spacing. Discussion is provided on a preliminary model that invokes polygonization of thermal-stress generated dislocations, and on implications of the dependence of device performance on the film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.6.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Im, J. S. and Sposili, R. S., MRS Bulletin xxi, 39 (1996).Google Scholar
[2] Sposili, R. S. and Im, J. S., Appl. Phys. Lett. 69, 2864 (1996).Google Scholar
[3] Im, J. S., Sposili, R. S., and Crowder, M. A., Appl. Phys. Lett. 70, 3434 (1997).Google Scholar
[4] Im, J. S., Crowder, M. A., Sposili, R. S., Leonard, J. P., Kim, H. J., Yoon, J. H., Gupta, V. V., Song, H. J., and Cho, H. S., Physica Status Solidi 166, 603 (1998).Google Scholar
[5] Chalmers, B., Principles of Solidification (John Wiley & Sons, Inc., New York, 1964).Google Scholar
[6] Limanov, A. B., Borisov, V. M., Vinokhodov, A. Y., Demin, A. I., El'tsov, A. I., Kirukhin, Y. B., and Khristoforov, O. B., in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, edited by Hemment, P. L. F. (Kluwer Academic Publishers, New York, 2000), pp. 55–61.Google Scholar
[7] Sposili, R. S., Crowder, M. A., and Im, J. S., New excimer laser crystallization system for conducting the sequential lateral solidification (SLS) process, to be published in these proceedings.Google Scholar
[8] Geis, M. W., Smith, H. I., and Chen, C. K., J. Appl. Phys. 60, 1152 (1986).Google Scholar
[9] Kim, H. J. and Im, J. S., Appl. Phys. Lett. 68, 1513 (1996).Google Scholar
[10] Givargizov, E. I., Oriented crystallization on amorphous substrates (Plenum Press, New York, 1991).Google Scholar
[11] Gibson, J. M., Pfeiffer, L. N., West, K. W., and Joy, D. C., in Silicon-On-Insulator and Thin Film Transistor Technology, edited by Chiang, A., Geis, M. W., and Pfeiffer, L. N. (Mater. Res. Soc. Proc., Pittsburg, Penn., 1986), Vol. 53, pp. 289–299.Google Scholar
[12] Kamgar, A., Nakahara, S., and Knoell, R. V., in Beam-Solid Interactions and Transient Processes, edited by Thompson, M. O., Picraux, S. T., and Williams, J. S. (Mater. Res. Soc. Proc., Pittsburg, Penn., 1987), Vol. 74, pp. 571–576.Google Scholar
[13] Baumgart, H. and Phillipp, F., in Energy Beam-Solid Interactions and Transient Thermal Processing, edited by Biegelsen, D. K., Rozgonyi, G. A., and Shank, C. V. (Mater. Res. Soc. Proc., Pittsburg, Penn., 1985), Vol. 35, pp. 593–598.Google Scholar
[14] Jung, Y. H., Yoon, J. M., Yang, M. S., Park, W. K., Soh, H. S., Cho, H., Limanov, A. B., and Im, J. S., Low temperature poly-Si TFTs fabricated with directionally crystallized Si films, to be published in these proceedings.Google Scholar
[15] Leonard, J. P. and Im, J. S., in Nucleation and Growth Processes in Materials, edited by Gonis, A., Turchi, P. E. A., and Ardell, A. J. (Mater. Res. Soc. Proc., Pittsburg, Penn., 2000), Vol. 580, to be published.Google Scholar