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Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors

Published online by Cambridge University Press:  01 February 2011

Grace Huiqi Wang ,
Eng-Huat Toh ,
Keat-Mun Hoe ,
S. Tripathy ,
Guo-Qiang Lo ,
Ganesh Samudra  and
Yee-Chia Yeo
Grace Huiqi Wang
Affiliation:
[email protected], National University of Singapore, Electrical and Computer Engineering, Silicon Nano Device Lab Engineering drive 3, Singapore, 459441, Singapore
Eng-Huat Toh
Affiliation:
[email protected], National University of Singapore, Electrical and Computer Engineering, Silicon Nano Device Lab Engineering drive 3, Singapore, 459441, Singapore
Keat-Mun Hoe
Affiliation:
[email protected], Institutue of Microelectronics, Singapore, 117685, Singapore
S. Tripathy
Affiliation:
[email protected], Institute of Materials Research & Engineering, Singapore, 117602, Singapore
Guo-Qiang Lo
Affiliation:
[email protected], Institutue of Microelectronics, Singapore, 117685, Singapore
Ganesh Samudra
Affiliation:
[email protected], National University of Singapore, Electrical and Computer Engineering, Silicon Nano Device Lab Engineering drive 3, Singapore, 459441, Singapore
Yee-Chia Yeo
Affiliation:
[email protected], National University of Singapore, Electrical and Computer Engineering, Silicon Nano Device Lab Engineering drive 3, Singapore, 459441, Singapore
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Abstract

Silicon (Si) source and drain (S/D) regions have been successfully integrated in thin-body silicon-germanium-on-insulator (SGOI) n-FETs. The selectively grown Si S/D induces uniaxial tensile strain in the SiGe channel. Devices with gate length LG down to 50 nm were fabricated. The Si S/D gives rise to 40% higher saturation drive current IDsat for transistors fabricated on Si0.60Ge0.40-on-insulator substrates. For n-FETs fabricated on Si0.75Ge0.25-on-insulator substrates, a 27% IDsat enhancement was observed. Lattice mismatch between the silicon S/D region and the SiGe channel was exploited to induce lateral tensile strain and vertical compressive strain in the channel, leading to enhancement in electron mobility. Analyses of contributions from the tensile strain to mobility enhancement and performance improvement are discussed

Keywords

Gestress/strain relationshipepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 995: Symposium G – Extending Moore's Law with Advanced Channel Materials , 2007 , 0995-G03-04
Copyright
Copyright © Materials Research Society 2007

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