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A study on the importance of isolation of the active regions for high performance organic circuits

Published online by Cambridge University Press:  17 May 2011

R. Myers ,
D. Donaghy  and
M. Raja
R. Myers
Affiliation:
Organic Electronics Group, Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK
D. Donaghy
Affiliation:
Organic Electronics Group, Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK
M. Raja
Affiliation:
Organic Electronics Group, Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK
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Abstract

The authors present electrical comparisons on an array of test structures including organic lateral diodes and thin film transistors (OTFT), fabricated with a range of disordered and polycrystalline organic semiconductors, to examine the increasing need for effective isolation for organic-based circuits. As the minimum feature size decreases, circuit components become closely positioned, which leads to increased electrical crosstalk. The organic semiconductors utilised for this work include solution-processable organic semiconductors such as disordered polymers P3HT and PTAA, and a polycrystalline material TIPS-pentacene. In order to predict the magnitude required for isolation for the different semiconductors, simple test structures have been designed consisting of two gold electrodes separated by a distance ranging from 4 μm up to 2000 μm. The bulk conductivity from such test structures provides the limits at which circuit components may be placed for crosstalk free operation. The work presented culminates in the development of an isolation layer to help reduce the off-currents and gate leakages of the OTFTs.

Keywords

organicthin filmelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1359: Symposium NN – Electronic Organic and Inorganic Hybrid Nanomaterials—Synthesis, Device Physics and Their Applications , 2011 , mrss11-1359-nn02-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Madec, M., Crouch, D., Llorente, G., Whittle, T., Geoghegan, M., Yeates, S.. J. Mater. Chem. 18, 3230–3236 (2008).Google Scholar
2. Lidzey, D., Voigt, M., Giebeler, C., Buckley, A., Wright, J., Bohlen, K., Fieret, J., Allott, R., Org. Electron, 6, 5–6 (2005).Google Scholar
3. DeFranco, J., Schmidt, B. S., Lipson, M., Malliaras, G., Org. Electron, 7, 1, p22–28 (2006).Google Scholar
4. Lee, K., Choi, B., Park, J., Kang, S., Kim, S., Jung, G., Org. Electron, 11, 5, 748–754 (2010).Google Scholar
5. de Gans, B.-J., et al. , Adv. Mat. 16, 203 (2004).10.1002/adma.200300385Google Scholar
6. Lee, J., Kim, J., Ju, B., Kim, J., Oh, M., Jang, J., J. Korean Phys Soc, 45, 612–614 (2004).Google Scholar
7. Smith, J., Hamilton, R., Qi, Y., Kahn, A., Anthopoulos, T., Adv. Funct. Mater. 20, 2330–2337 (2010).Google Scholar
8. Sze, S. M., Physics of Semiconductor Devices, Wiley and Sons, 1981.Google Scholar
9. Ahmad, Z., Sayyad, M., Physica E, 41, 4, 631–634 (2009).Google Scholar