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Study on End-of-Range Defects Induced by Sb Implantation

Published online by Cambridge University Press:  01 February 2011

Yi-Sheng Lai ,
J. S. Chen ,
Y. S. Ho ,
H. L. Sun  and
K. B. Huang
Yi-Sheng Lai
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, TAIWAN
J. S. Chen
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, TAIWAN
Y. S. Ho
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
H. L. Sun
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
K. B. Huang
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
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Abstract

Extended defects formed by antimony ion implantation in Si(100) was investigated as a function of the implant energy. The implanted layer was examined by cross-sectional electron microscopy (TEM). Post-implantation spike-annealing was also performed from 950°C to 1095°C to examine evolution of defects. From the TEM study, the threshold energy to induce visible defects for Sb implantation was found to be more than 50 keV. A mapping for the location of defects was constructed by TEM and secondary ion mass spectroscopy (SIMS). The end-of-range (EOR) defects, which were possibly formed during the solid phase epitaixy regrowth, were located near the lower bound of the transition region. For 70-keV implantation, extended defects appear at the near-surface and the EOR region. It was observed that the near-surface defects diminished after annealing at more than 1050°C, while the EOR defects became coarsening at 1095°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R3.13
Copyright
Copyright © Materials Research Society 2004

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References

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