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A Study of Trap Profiles in Thin Silicon Dioxide Films at Dielectric Breakdown Using Percolation Model

Published online by Cambridge University Press:  10 February 2011

S. Uno ,
A. Ishida ,
K. Okada ,
T. Sakura ,
K. Deguchi ,
Y. Kamakura  and
K. Taniguchi
S. Uno
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
A. Ishida
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
K. Okada
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
T. Sakura
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
K. Deguchi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
Y. Kamakura
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
K. Taniguchi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan, [email protected]
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Abstract

A Monte Carlo simulation of wear-out process in thin silicon dioxide films is performed to investigate the correlation between the electron trap distribution and the dielectric breakdown. Non-uniformity of the trap generation and its dependence on the stress conditions are monitored by the measurements of the charge centroid. In order to include these experimental observations into Degraeve's percolation model [IEDM Tech. Dig., pp.863-866 (1995)], we introduce exponential trap profiles decaying from the Si/SiO2 interface. Our new model successfully reproduces critical threshold voltage shifts from the information about critical charge centroids for various stress conditions. Finally, as a reasonable explanation of the stress dependent breakdown properties, we suggest that the bond strain caused by lattice mismatch at the interface is accelerated by the electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 331
Copyright
Copyright © Materials Research Society 2000

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References

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