Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-16T17:12:08.580Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of the Post-hydrogenation Passivation Mechanism of Crystallized Poly-Si Films

Published online by Cambridge University Press:  16 August 2011

Chong Luo ,
Juan Li ,
He Li ,
Zhiguo Meng ,
Chunya Wu ,
Qian Huang ,
Xu Shengzhi ,
Hoi Sing Kwok  and
Shaozhen Xiong
Chong Luo
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
Juan Li
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
He Li
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Zhiguo Meng
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
Chunya Wu
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
Qian Huang
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
Xu Shengzhi
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
Hoi Sing Kwok
Affiliation:
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Shaozhen Xiong*
Affiliation:
Institute of Photo-Electronics, Nankai University, Tianjin 300071, P. R. China
*
♥Corresponding author e-mail: [email protected]
Get access

Abstract

The roles of hydrogen plasma radicals on passivation of several kinds of crystallized poly-Si thin films were investigated using optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, and absorption coefficient spectra. It was found that different kinds of hydrogen plasma radicals are responsible for passivation of dissimilar poly-Si crystallized by different method. Radicals Hα with lower energy are mainly responsible for passivating the poly-Si crystallized by solid phase crystallization (SPC) whose crystallization precursor was made by plasma enhanced chemical vapor deposition (PECVD). Higher energy radicals H* are more effective in passivating defects left over by Ni in poly-Si crystallized by Metal Induced Crystallization (MIC). The highest energy radicals Hβ and Hγ are needed to passivate the defects in poly-Si crystallized by SPC but whose precursor was made by low pressure CVD (LPCVD).

Keywords

polycrystaldefectspassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-06
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nickel, N. H., Johnson, N. M., and Jackson, W. B., Appl. Phys. Lett. 62, 3285 (1993)10.1063/1.109101Google Scholar
2. Van Gestel, D., Romero, M. J., Gordon, I., Carnel, L., D’Haen, J., Beaucarne, G., Al-Jassim, M., and Poortmans, J., Appl. Phys. Lett. 90, 092103 (2007)10.1063/1.2709643Google Scholar
3. Darwichea, S., Nikravecha, M., Morvana, D., Amourouxa, J., Ballutaud, D., Solar Energy Materials & Solar Cells 91, 195–200 (2007)10.1016/j.solmat.2006.08.008Google Scholar