Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T08:02:54.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the Microstructure of Amorphous Germanium Alloys Using AFM and SAXS

Published online by Cambridge University Press:  15 February 2011

Paul R. Moffitt ,
Hameed A. Naseem ,
Simon S. Ang  and
William D. Brown
Paul R. Moffitt
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701
Hameed A. Naseem
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701
Simon S. Ang
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701
William D. Brown
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701
Get access

Abstract

Many researchers have found the photoresponse of germanium-based films to be directly related to the homogeneity of the film's microstructure, with more homogeneous films having better photoresponse. Transmission electron microscopy (TEM) gives the resolution needed for studying microstructure, but is typically limited to imaging films with a thickness of less than 200 nm. Surface measurement by atomic force microscopy (AFM) gives a three-dimensional representation of the film surface and can be used for measuring any thickness film. A more complete idea of the microstructure can be gained by combining AFM with small-angle x-ray scattering (SAXS) measurements. SAXS measurements yield the size of internal voids or less dense regions and indicate whether the inhomogeneities have a preferred orientation, such as might be associated with columnar growth. Films of amorphous germanium and germanium carbon alloy were grown by the PECVD method from SiH4, GeF4, H2 and CH4 source gases. The films were then characterized using AFM, SAXS, and FTIR. The effect that various growth conditions had on the microstructure and photoresponse will be reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 197
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERNCES

[1] Paul, W., Jones, S., Turner, W., Wickboldt, P., J. of Non-Crystalline Solids, 141, 271 (1992).Google Scholar
[2] Turner, W., Jones, S., Pang, D., Bateman, B., Chen, J., Li, Y., Marques, F., Wetsel, A., Wickboldt, P., Paul, W., Bodart, J., Norberg, R., El Zawawi, I., Theye, M., J. Appl. Phys. 67 (12), 7430 (1990).Google Scholar
[3] Williamson, D., Mahan, A., Nelson, B., Crandall, R., Appl. Phys. Lett., 55 (8) 783 (1989).Google Scholar
[4] Muramatsu, S., Matsubara, S., Watanabe, T., Shimada, T., Kamiyama, T., J. of Non-Crystalline Solids, 150, 163 (1992).Google Scholar
[5] Moffitt, P., Naseem, H., Ang, S., Brown, W., in Amorphous Silicon Technology - 1994. edited by Schiff, E., Hack, M., Madan, A., Powell, M., Matsuda, A., (Mater. Res. Soc. Proc. 336, Pittsburgh, PA, 1994) pp. 601–606.Google Scholar
[6] Digital Insturments, Inc. Nanoscope 111 Command Reference Manual. Ver. 3. (1993) pp. 259–260.Google Scholar
[7] Guinier, A., Fournet, G., trans, by Walker, C., Small-Angle Scattering of X-rays. (John Wiley & Sons, Inc., New York, 1955). pp. 123–124, 190–192.Google Scholar
[8] Jia, H., Shinar, J., Chen, Y., Williamson, D., in Amorphous Silicon Technology - 1992, edited by Schiff, E., Hack, M., Madan, A., Powell, M., Matsuda, A., (Mater. Res. Soc. Proc. 258, Pittsburgh, PA, 1994) pp. 281–285.Google Scholar