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A Study of the Electronic Structure Near Individual Dislocations in Diamond by Energy-Loss Spectroscopy

Published online by Cambridge University Press:  26 February 2011

J. Bruley  and
P. E. Batson
J. Bruley
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
P. E. Batson
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

Spatially resolved electron energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band-gap just below the 1s to bulk conduction band threshold energy, when compared to spectra recorded from neighboring defect free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the π* states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. A comparison is drawn between the measured near edge structure and calculations of local density of states reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 255
Copyright
Copyright © Materials Research Society 1990

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References

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