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A Study of the Anodic Oxidation on Aluminium by Ion-Implanted Xe Ions Marker and RBS Analysis Techniques

Published online by Cambridge University Press:  25 February 2011

Hemting Chen ,
Xinde Bai ,
Wangpei Li  and
Mingjiang Dai
Hemting Chen
Affiliation:
Department of Engineering Physics,Tsingitua University, Beijing,China
Xinde Bai
Affiliation:
Department of Engineering Physics,Tsingitua University, Beijing,China
Wangpei Li
Affiliation:
Department of Engineering Physics,Tsingitua University, Beijing,China
Mingjiang Dai
Affiliation:
Department of Engineering Physics,Tsingitua University, Beijing,China
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Abstract

This paper presents the results on the mechanism of the anodic oxidation on Al by means of ion–implanted marker Layer of xenon and RBS analysis techniques. ExperimentaLly, it has been shown that the mechanisms of anoulic oxidation on Al are different in the different elctrolytes. In the solution of 15%.wt sulphuric-acid, the anodic oxide film is formed by the react ion be tweeit metal rations at the metal/oxide interface and continuously migrated oxygen anions. While in the solution of 5%wt ammonium citrate, both tie migration of the metal cations and that of the oxygen anions contribute to the formation of the anodic flim, and the oxidization takes place in internal region of the oxide ftim or at lhe interface. The transport numbers for Al in 5%.wt ammonium citrate were found to vary with the voltage or current density front 44% to 64∼

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 479
Copyright
Copyright © Materials Research Society 1989

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References

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