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Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique

Published online by Cambridge University Press:  01 February 2011

G. Tamulaitis ,
J. Mickevic ,
M. Shur ,
Q. Fareed  and
R. Gaska
G. Tamulaitis
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania
M. Shur
Affiliation:
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Q. Fareed
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia SC 29209, U.S.A.
R. Gaska
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia SC 29209, U.S.A.
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Abstract

We report on the gain study in high-quality thick GaN layers using the Variable Stripe Length (VSL) technique. The layers were grown by Migration Enhanced Metal Organic Chemical Vapor Deposition (MEMOCVDTM). The amplification of light was investigated for the propagation directions along the layer surface (perpendicular to the c-axis of the crystal) and perpendicular to the layer (along the c-axis) for the layers with thicknesses up to 11 νm. By fitting the experimental stripe length dependence of the edge luminescence with one-dimensional description of light amplification in medium with positive gain, peak gain coefficients of up to 7300 cm-1 were estimated in GaN at the excitation power density of 2 MW/cm2. We discuss limitations of the VSL technique due to the assumption of one-dimensional light propagation and strong influence of gain saturation in a high-gain medium. The contribution of new gain modes after saturation of the highest-gain modes was observed. The optical gains in GaN samples with different carrier lifetimes (obtained using time-resolved photoluminescence and light-induced transient grating techniques) were compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V4.4/FF4.4
Copyright
Copyright © Materials Research Society 2005

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