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Study of Ni(Pt) germanosilicides formation on fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001 by Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

J. Y. Y. Chaw ,
K. L. Pey ,
P. S. Lee ,
D. Z. Chi  and
J. P. Liu
J. Y. Y. Chaw
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
K. L. Pey
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
P. S. Lee
Affiliation:
School of Materials Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
D. Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602
J. P. Liu
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Woodlands Industrial Park D, Street 2, Singapore, 738406
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Abstract

In this work, Raman spectroscopy was used to study the reaction of pure Ni and Ni(Pt 5 at. %) with fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001. With pure Ni, it was found that the incorporation of 0.1% C in the substrate resulted in out-diffusion of Ge from the germanosilicide film at a lower rapid thermal annealing (RTA) temperature compared to that of pure Ni on Si0.9Ge0.1. This Ge out-diffusion phenomenon is evident from the gradual shift in the NiSi1-wGew (w ≤ x) Raman peak from ∼213 cm−1 to higher wavenumbers, closer to 217 cm−1 as reported for pure Ni/Si, indicating that Ge is being depleted from the film with increasing RTA temperatures. In addition, it was found that severe agglomeration of the germanosilicide film occurred at a lower RTA temperature for the Ni/Si0.899Ge0.1C0.001 system. This corresponds to the observations from the Raman spectra, where a sharp increase in the Si substrate peak at 520 cm−1 was observed, coupled with the appearance of the transverse acoustic (TA)-phonon peak of Si at 301 cm−1. When Pt was introduced into the Ni film, significant improvements were observed for the germanosilicide films on Si0.9Ge0.1 and Si0.899Ge0.1C0.001 substrates, both in terms of Ge out- diffusion and agglomeration. Initial findings show that the addition of Pt promotes the formation of the low resistivity mono-germanosilicide phase at temperatures as low as 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.2
Copyright
Copyright © Materials Research Society 2004

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References

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