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A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy

Published online by Cambridge University Press:  28 February 2011

D A Williams ,
R A Mcmahon ,
D G Hasko ,
H Ahmed ,
G F Hopper  and
D J Godfrey
D A Williams
Affiliation:
Microelectronics Research Laboratory, University of Cambridge, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, UK.
R A Mcmahon
Affiliation:
Microelectronics Research Laboratory, University of Cambridge, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, UK.
D G Hasko
Affiliation:
Microelectronics Research Laboratory, University of Cambridge, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, UK.
H Ahmed
Affiliation:
Microelectronics Research Laboratory, University of Cambridge, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, UK.
G F Hopper
Affiliation:
GEC Research Ltd, Hirst Research Centre, Wembley, Middlesex HA9 7PP, UK.
D J Godfrey
Affiliation:
GEC Research Ltd, Hirst Research Centre, Wembley, Middlesex HA9 7PP, UK.
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Abstract

The formation of silicon-on-insulator structures, by recrystallising polycrystalline silicon films with a dual electron beam technique, has been studied over a wide range of conditions. The quality of the layers has been assessed by examining cross-sections in the SEM and optical microscopy of the surface after a Secco etch. The range of line powers which gives device-worthy single crystal material becomes greater as the sweep speed increases and as the background temperature is reduced. The extent of melting into the substrate in the seed windows and below the isolating oxide was determined from the movement of an arsenic implant. The experimental results are compared to the predictions from a one dimensional model for the heat flow.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 15
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1Davis, J. R., McMahon, R. A. and Ahmed, H., J. Electrochem. Soc. 132, 1919 (1985).Google Scholar
2Godfrey, D. J., Hill, A. C. and Hill, C., J. Electrochem. Soc. 128, 1798 (1981).Google Scholar
3Nissim, Y., Leitoila, A., Gold, R. B. and Gibbons, J. F., J Appl Phys 51, 274 (1980).Google Scholar