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A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

W. G. Bi ,
X. B. Mei ,
K. L. Kavanagh ,
C. W. Tu ,
E. A. Stach  and
R. Hull
W. G. Bi
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, U. S. A.
X. B. Mei
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, U. S. A.
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, U. S. A.
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, U. S. A.
E. A. Stach
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442, U. S. A.
R. Hull
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442, U. S. A.
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Abstract

We report the effects of growth conditions on the strain and crystalline quality of lowtemperature (LT) grown GaP films by gas-source molecular beam epitaxy. At temperatures below 160 °C, poly-crystalline GaP films are always obtained, regardless of the PH3 low rate used, while at temperatures above 160 °C, the material quality is affected by the PH3 flow rate. Contrary to compressively strained LT GaAs, high-resolution X-ray rocking curve measurement indicates a tensile strain of the LT GaP films, which is considered to be due to PGa antisite defects. The strain is found to be affected by the PH3 flow rate, the growth temperature, and post-growth annealing. Contrary to LT GaAs, no P precipitates are observed in cross-sectional transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 293
Copyright
Copyright © Materials Research Society 1996

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