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Study of Low-Energy Ion Assisted Epitaxy of Gan Films: Influence of the Initial Growth Rate

Published online by Cambridge University Press:  10 February 2011

J. W. Gerlach ,
D. Schrupp ,
R. Schwertberger ,
B. Rauschenbach  and
A. Anders
J. W. Gerlach
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, [email protected]
D. Schrupp
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, [email protected]
R. Schwertberger
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, [email protected]
B. Rauschenbach
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, [email protected]
A. Anders
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

The deposition of thin epitaxial hexagonal gallium nitride films on c-plane sapphire by low-energy nitrogen ion assisted deposition is shown to result in films of high crystalline quality. The quality can be further heightened by using the concept of an isothermal growth rate ramp. Characterization of film structure, defect density distribution and surface topography by XRD, RBS/C, and AFM, respectively, reveals the importance of the nitrogen ion energy and the ion to atom ratio on the film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 239
Copyright
Copyright © Materials Research Society 2000

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