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A Study of Elemental Interdiffusion in GaN/Si Wafer Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

X. Chen ,
M. Ishiko ,
Y. Kuroiwa  and
N. Sawaki
X. Chen
Affiliation:
Toyota Central R&D Labs. Inc., Nagakute, Archi, 480–1192, Japan
M. Ishiko
Affiliation:
Toyota Central R&D Labs. Inc., Nagakute, Archi, 480–1192, Japan
Y. Kuroiwa
Affiliation:
Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464–8603, Japan
N. Sawaki
Affiliation:
Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464–8603, Japan
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Abstract

Secondary ion mass spectrometry (SIMS) study shows that a short-time interdiffusion process occurs at the interface of buffer/Si in the GaN/Si wafers grown by metalorganic vapor phase epitaxy (MOVPE). Increasing the growth temperature of the buffer layer from 1150°C to 1210°C reduces the dropping rate of Al concentration in the silicon substrate from ∼20nm/decade to ∼30nm/decade near the interface. The impact of the interdiffusion on the band structure is investigated by photocurrent spectroscopy measurement. The experimental results indicate that different build-in electric fields are formed in the GaN/n-Si(111) and GaN/p-Si(111) devices as the consequence of the MOVPE growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.42
Copyright
Copyright © Materials Research Society 2004

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References

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