Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T09:41:37.780Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.

Published online by Cambridge University Press:  21 February 2011

Ch. Steer ,
L. Chibani ,
J.M. Koebel ,
M. Hage-Ali  and
P. Siffert
Ch. Steer
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cede;, France
L. Chibani
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cede;, France
J.M. Koebel
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cede;, France
M. Hage-Ali
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cede;, France
P. Siffert
Affiliation:
CNRS Lab. Phase, F-67037 Strasbourg Cede;, France
Get access

Abstract

The properties of Cadmium Telluride are very sensitive to impurities. The growth method has also a strong impact on the material characteristics. Crystals grown by THM have good X-ray detector properties, while normal undoped Bridgman grown crystals do not detect. We have grown pure and doped samples by Bridgman and THM methods. As doping materials we used V, Zn and Cl, also in different combinations. The samples were characterized by several methods, including resistivity, TSC and nuclear detection measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 457
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Launay, J.C., Mazzoyer, V., Tapiero, M., Zielinger, J.P., Guellil, Z., Delaye, Ph. and Roosen, G., Applied Physics A, 55, 33 (1992).Google Scholar
2. Partovi, A., Millerd, J. and Garmire, E.M., Appl. Phys. Lett. 57, 846 (1990).Google Scholar
3. Samimi, M., Biglari, B., Hage-Ali, M. and Siffert, P.,Google Scholar
4. Biglari, B., Samimi, M., Koebel, J.M., Hage-Ali, M. and Siffert, P., Phys.Stat.Sol.(a) 100, 589 (1987).Google Scholar
5. Chibani, L., Hage-Ali, M., Stoquert, J.P., Koebel, J.M. and Siffert, P., Mat.Sci.Eng.(b) 16, 202 (1993).Google Scholar
6. Samimi, M., Biglari, B., Hage-Ali, M., Koebel, J.M. and Siffert, P., Phys.Stat.Sol.(a) 100, 251 (1987).Google Scholar
7. Moravec, P., Hage-Ali, M., Chibani, L. and Siffert, P., Mater.Sci.Eng.(b) 16, 223 (1993).Google Scholar