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The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

Jinshen Luo ,
P.J. Mc Marr  and
K. Vedam
Jinshen Luo
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
P.J. Mc Marr
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. Vedam
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

We have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 529
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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