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Study of crystalline structure N-doped GeSb Phase Change Material for PCRAM applications

Published online by Cambridge University Press:  01 February 2011

Audrey Bastard ,
Sandrine Lhostis ,
Caroline Bonafos ,
Sylvie Schamm-Chardon ,
Pierre-Eugène Coulon ,
Frederic Fillot ,
Giada Ghezzi ,
Andrea Fantini ,
Luca Perniola  and
Sebastien Loubriat
...Show all authors
Audrey Bastard
Affiliation:
[email protected], CEMES, Toulouse, France
Sandrine Lhostis
Affiliation:
[email protected], ST, Crolles, France
Caroline Bonafos
Affiliation:
[email protected], CEMES, Toulouse, France
Sylvie Schamm-Chardon
Affiliation:
[email protected], CEMES, Toulouse, France
Pierre-Eugène Coulon
Affiliation:
[email protected], CEMES, Toulouse, France
Frederic Fillot
Affiliation:
[email protected], CEA, Grenoble, France
Giada Ghezzi
Affiliation:
[email protected], CEA, Grenoble, France
Andrea Fantini
Affiliation:
[email protected], CEA, Grenoble, France
Luca Perniola
Affiliation:
[email protected], CEA, Grenoble, France
Sebastien Loubriat
Affiliation:
[email protected], CEA, Grenoble, France
Anne Roule
Affiliation:
[email protected], CEA, Grenoble, France
Emmanuel Gourvest
Affiliation:
[email protected], CEA, Grenoble, France
Edrisse Arbaoui
Affiliation:
[email protected], CEA, Grenoble, France
Alain Fargeix
Affiliation:
[email protected], CEA, Grenoble, France
Marilyn Armand
Affiliation:
[email protected], CEA, Grenoble, France
Berangere Hyot
Affiliation:
[email protected], CEA, Grenoble, France
Sylvain Maitrejean
Affiliation:
[email protected], CEA, Grenoble, France
Véronique Sousa
Affiliation:
[email protected], CEA, Grenoble, France
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Abstract

100 nm-thick GeSbN films with high Sb content were investigated by XRD and TEM in order to investigate crystalline phases. We observe the crystallization of the two phases separatly. First, Sb rhomboedral crystallizes at 250°C and then cubic Ge appears at 340°C according to Reflectivity and X-Ray Diffraction measurements. With the incorporation of nitrogen in the thick films, a delay to crystallization of the two phases is observed. Grain size measurements with Scherrer formula support the decrease of grain crystallization with N content. Moreover, TEM observations show clearly the separation of the two phases in the layer and the reduction in size of the grains with nitrogen content. This allows a better re-amorphization than films without nitrogen.

Keywords

crystal growthcrystallinephysical vapor deposition (PVD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H03-22
Copyright
Copyright © Materials Research Society 2010

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