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Study of Boron Implantation in CdTe

Published online by Cambridge University Press:  26 February 2011

D. N. Jamieson ,
R. C. Bowman Jr ,
P. M. Adams ,
J. F. Knudsen  and
R. G. Downing
D. N. Jamieson
Affiliation:
California Institute of Technology, 116-81, Pasadena, CA 91125
R. C. Bowman Jr
Affiliation:
Laboratory Operations, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
Laboratory Operations, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
J. F. Knudsen
Affiliation:
Laboratory Operations, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
R. G. Downing
Affiliation:
National Bureau of Standards, Gaithersburg, MD 20899.
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Abstract

The effect of large dose boron implantation in single crystal CdTe has been investigated by Rutherford Backscattering Spectrometry with channeling (RBS), double crystal x-ray diffraction (DCD) and photoreflectance spectroscopy (PR). Comparisons are made with the results of identical B implantations of Si and GaAs crystals. Multiple energy implantations were performed at room temperature and liquid nitrogen temperature with total doses up to 1.5×1016 B+ ions/cm2. The implanted B distribution was measured with neutron depth profiling (NDP) and found to agree well with Monte-Carlo ion range calculations. The RBS results showed that the CdTe crystals had not been rendered completely amorphous even for the highest dose implantation, unlike GaAs and Si. Furthermore, the DCD results showed little implantation induced structure in the rocking curves from the implanted CdTe crystals, in contrast to GaAs. The consequences of annealing at 500°C in an attempt to regrow the crystal structure are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 299
Copyright
Copyright © Materials Research Society 1988

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References

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