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Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

Published online by Cambridge University Press:  16 February 2011

B. W. Liang ,
H. Q. Hou  and
C. W. Tu
B. W. Liang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
H. Q. Hou
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
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Abstract

A simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 145
Copyright
Copyright © Materials Research Society 1991

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References

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