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Studies on Phosphorus-Implantation and the Annealing of Cadmium Telluride and Copper Indium Disulfide

Published online by Cambridge University Press:  21 February 2011

Y. J. Hsu ,
H. L. Hwang  and
H. Y. Ueng
Y. J. Hsu
Affiliation:
Dept. of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
H. L. Hwang
Affiliation:
Dept. of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
H. Y. Ueng
Affiliation:
Dept. of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China
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Abstract

The doping efficiencies obtained in phosphorus-implanted cadmium telluride and copper indium disulfide annealed by pulse electron beam were higher than those annealed by conventional thermal method. To get insights into this phenomenon, electron paramagnetic resonance measurements were performed for both crystals at various stages during the doping process. The results indicated that the pulse electron beam annealing could effectively eliminate the phosphorus interstitials in the implanted crystals but the thermal annealing could not. This shows the significant effect of melting crystals by pulse electron beam annealing to obtain high doping efficiencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 351
Copyright
Copyright © Materials Research Society 1989

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