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Studies of the Microscopic Nature of Cu-Pairs in Silicon

Published online by Cambridge University Press:  10 February 2011

A.A. Istratov ,
T. Heiser ,
H. Hieslmair ,
C. Flink  and
E.R. Weber
A.A. Istratov
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, [email protected]
T. Heiser
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, [email protected]
H. Hieslmair
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, [email protected]
C. Flink
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, [email protected]
E.R. Weber
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, [email protected]
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Abstract

Studies of the thermal dissociation kinetics of Cu-pairs in p-type silicon revealed that the dissociation energy of the pairs is 1.02±0.07 eV, which is twice as large as the binding energy of a coulombically bound donor-acceptor pairs formed by singly charged ions placed on nearest neighbor <111> sites. The dependence of the hole emission rate from the center versus electric field in the depletion region was found to be much weaker than predicted by the Pool-Frenkel law. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu-pair is a donor with either covalent or mixed type of bonding of interstitial and substitutional copper atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 355
Copyright
Copyright © Materials Research Society 1998

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References

1. Graff, K., Metal impurities in silicon-device fabrication (Springer, Berlin, 1995), p.86.Google Scholar
2. Istratov, A.A. and Weber, E.R., Appl.Phys.A: Mater.Sci. & Process. 66, 123 (1998).Google Scholar
3. Koveshnikov, S., Pan, Y. and Mollenkopf, H., in: Proceedings of the 4 th international symposium on High Purity Silicon, Eds: Claeys, C.L., Stallhofer, P., Rai-Choudhury, P. and Maurtis, J.E., Electrochem. Soc.Proc. 96–13 (1996).Google Scholar
4. Erzgräber, H.B. and Schmalz, K., J. Appl. Phys. 78, 4066 (1995).Google Scholar
5. Weber, J., Bauch, H. and Sauer, R., Phys. Rev. B 25, 7688 (1982).Google Scholar
6. Minaev, N.S., Mudryi, A.V. and Tkachev, V.D., Sov.Phys.Semicond. 13, 233 (1979).Google Scholar
7. Graff, K. and Pieper, H., in: Semiconductor Silicon-81 eds. Huff, H.R. and Kriegler, R.J. (The Electrochemical Society, Pennington, 1981), p.331.Google Scholar
8. Istratov, A.A., Flink, C., Heiser, T., Hieslmair, H. and Weber, E.R., Phys.Rev.Lett., submitted for publication.Google Scholar
9. Zohta, Y. and Watanabe, M.O., J. Appl. Phys. 53, 1809 (1982).Google Scholar
10. Hai, P.N., Gregorkiewicz, T., Ammerlaan, C.A.J. and Don, D.T., Phys. Rev.B 56, 4620 (1997).Google Scholar
11. Hai, P.N., Gregorkiewicz, T., Ammerlaan, C.A.J. and Don, D.T., Phys.Rev.B 56, 4614 (1997).Google Scholar
12. Hall, R.H. and Racette, J.H., J. Appl. Phys. 35, 379 (1964).Google Scholar
13. Chantre, A. and Kimmerling, L.C., International Conference on Defects in Semiconductors-14, ed.: von Bardeleben, H.J. (Transtech publications, Aedermannsdorf, Switzerland 1986), p.387.Google Scholar
14. Chantre, A. and Bois, D., Phys.Rev. B 31, 7979 (1985).Google Scholar
15. Feichtinger, H., Ostwald, J., Czaputa, R., Vogl, P. and Wfnstel, K., International Conference on Defects in Semiconductors-13. eds: Kimerling, L. C. and Parsey, J.M. (the Metallurgical Soc. of AIME, Warrendale, Pennsylvania 1984), p.855.Google Scholar
16. Kimerling, L.C. and Benton, J.L., Physica 116 B, 297 (1983)Google Scholar
17. Lefevre, H. and Schulz, M., Appl. Phys. 12, 45 (1977).Google Scholar
18. Hartke, J.L., J. Appl. Phys. 39, 4871 (1968).Google Scholar
19. Martin, P.A., Streetman, B.G. and Hess, K., J. Appl. Phys. 52, 7409 (1981).Google Scholar
20. Lax, M., Phys. Rev. 119, 1502 (1960).Google Scholar
21. Tash, A.F. and Sah, C.T., Phys. Rev. B 1, 800 (1970).Google Scholar
22. Wagner, P., Hage, H., Prigge, H., Prescha, Th. and Weber, J., in: Semiconductor Silicon- 1990, Eds: Huff, H.R., Barraclough, K.G. and Chikawa, J.-I. (Electrochemical.Soc., Pennington, NJ 1990).Google Scholar
23. Estreicher, K.S., Phys.Rev. B 41, 5447 (1990).Google Scholar